Poco Graphite, Inc. Silicon Carbide (SiC)
Subcategory: Carbide
Material Notes: POCO's silicon carbide products are produced using a unique manufacturing method. This manufacturing technique allows unparalleled flexibility in design without prohibitive costs and lead times. Silicon Carbide products are designed with features to reduce thermal mass while retaining high strength. Parts are machined from high quality POCO graphite and purified to less than 5 PPM ash. The purified parts are then subjected to a proprietary process which substitutes pure silicon atoms for half of the carbon atoms in the graphite, converting the graphite to high purity silicon carbide. Tight tolerance features can be machined into the carrier after conversion. Silicon Carbide has correct stoichiometry (1:1 ratio). This allows for superior product life in front-end semiconductor applications when compared to quartz and slip cast Si:SiC materials. Information provided by Poco Graphite, Inc.
Available Properties |
- Density
- Flexural Strength
- CTE, linear 20°C
- Thermal Conductivity
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Property Data |
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